Electronic Circuits and Measurements IS-FCS-00036S

Description:
Preparation of active elements on a silicon substrate. MOS and bipolar transistors. Technologies of realisation of TTL and CMOS integrated digital circuits . TTL ICs. NAND gate. Static and dynamic parameters of gates. TTL series chips. Monostable and astable circuits. NE555 device. Square wave generator. MOS capacitor. MOS transistor. MOS digital circuits. NMOS gates. Digital signal transmission through the MOS transistor. CMOS circuits. Dynamic logic. Disadvantages of CMOS circuits. Family of CMOS digital circuits. BiCMOS families digital circuits. Orocess of analog-to-digital conversion. The basic structural components of AD and DA conferters. DACs. ADCs. Construction and operation of SRAM cell. Construction and operation of the DRAM cell. Organization of memory. Timing diagrams. Fast dynamic memory. ROM memory. General organization of ROM memory. Mask ROM, PROM, EPROM, EEPROM, FLASH. Programmable logic devices. Programmable devices design methodology. Hardware description languages.

Requirements:
Foundations of Electrotechnics and Electronics, Digital Circuit Engineering,